Power Integrations Announces 2200 V GaN Technology for AI Data Centers
August 14, 2026
News
Power Integrations announced its innovative 2200V PowiGaN gallium-nitride (GaN) technology surpasses the voltage capabilities of all other commercially available GaN technologies.
With the 2200 V PowiGaN technology, higher bus architectures are supported allowing future-proof power designs for datacenters, EVs, photovoltaic inverters, and battery-energy storage systems.
“Our 2200 V PowiGaN technology provides substantial voltage margin for emerging high-voltage power systems while enabling the high switching frequencies required to maximize power density,” said Jennifer Lloyd, president and CEO at Power Integrations. “Emerging applications include next-generation AI data centers, where industry roadmaps point toward 1500 V distribution architectures, as well as future EV battery and auxiliary power systems operating at increasingly higher output voltages (48V). This milestone breakthrough extends the reach of GaN into voltage ranges traditionally served by SiC, enabling a compelling high-frequency alternative for applications such as solar, HVDC and advanced industrial power conversion.”
For more information, visit power.com.
Chad Cox is the Production Editor at Embedded Computing Design. His responsibilities are centered around content creation, writing and editing, and article research and development. Chad covers industry news and events and is known to interact with various industrial leaders via on-premise visits and online interviews. He is responsible for the digital footprint and dissemination of news via social media posts, advertising creation and the production of newsletters including the Embedded Computing Design’s Daily.
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Chad graduated from the University of Cincinnati with a B.A. in Cultural and Analytical Literature and holds a master’s in education.
