UnitedSiC’s Latest SiC FETs Suited for Mainstream 800-V Bus Architectures - BlogJune 13, 2022
United SiC, now a division of Qorvo, recently announced a next-generation series of 1200-V Silicon Carbide (SiC) FETs with what the company claims is the industry’s best spec for on-resistance.
UnitedSiC Pushes the Envelope with SiC FETs - BlogSeptember 23, 2021
The embedded industry is getting more comfortable with silicon carbide (SiC) power semiconductors, as it’s no longer considered a “new” or “bleeding edge” technology. It’s now considered a mainstream technology.
UnitedSiC Introduces 750-V SiC FET Devices - NewsFebruary 08, 2021
The fear (that’s probably too strong of a word) surrounding silicon carbide (SiC) power semiconductors has subsided for the most part.
How to Minimize EMI and Switching Loss When Using SiC MOSFETs - StoryJanuary 26, 2021
The fast switching speed, high voltage rating, and low RDS(on) of silicon carbide (SiC) MOSFETs make them highly appealing for power designers who are constantly looking into ways to increase efficiency and power density, while maintaining system simplicity.
Pictures from PCIM 2019 - StoryMay 31, 2019
Here?s a slideshow of some of the interesting sights and people that were at PCIM 2019.
UnitedSiC Releases SiC JFET Family for Low-Power AC-DC Flyback Converters - NewsApril 01, 2019
UnitedSiC released a range of SiC JFET die, suitable for co-packaging with a controller IC with built in low voltage MOSFET to fabricate an extremely fast, cascode-based, 20-100 W Flyback product.