UnitedSiC Introduces 750-V SiC FET Devices
February 08, 2021
News
The fear (that’s probably too strong of a word) surrounding silicon carbide (SiC) power semiconductors has subsided for the most part.
The devices are not mainstream yet, but they are becoming pretty common in many applications, particularly those with the highest voltage and power demands. To that end, UnitedSiC recently released the first four devices based on its advanced Gen 4 SiC FET technology platform.
The company claims that the parts are the first and only 750-V SiC FETs currently available, and they enable new performance levels in such applications as automotive, industrial charging, telecom rectifiers, data center PFC, and DC-to-DC conversion as well as renewable energy and energy storage.
Available in 18- and 60-mΩ options, these SiC FETs offers a reduced on-resistance per unit area and low intrinsic capacitance. In hard-switching applications, the Gen 4 FETs offer a low turn-on and turn-off loss, while in soft-switching apps, they provide lower conduction loss and higher frequency. The specs remain more than competitive at high and low temperatures.
By moving to 750 V, engineers have more headroom and reduced design constraints. The higher VDS rating also makes the devices suitable for 400/500-V bus applications. With a widely compatible gate drive of +/-20V, 5 V Vth, all devices can be driven with 0- to +12-V gate voltages. This means they work with existing SiC MOSFET, Si IGBTs, and Si MOSFET gate drivers.
UnitedSiC expects to announce additional devices over the next nine months to further improve on cost-effectiveness, heat efficiency, and design headroom. Pricing for the newly announced devices start at $3.57 in 1000-piece quantities. All four new FETs are available now.
Rich Nass is a regular contributor to Embedded Computing Design. He has appeared on more than 500 episodes of the popular Embedded Executive podcast series, and is a regular contributor to the Embedded Insiders podcast.
Rich has been in the engineering OEM industry for more than 35 years, and is a recognized expert in the areas of embedded computing, Edge AI, industrial computing, the IoT, and cyber-resiliency and safety and security issues. He writes and speaks regularly on these topics and more.
Rich is currently the Liaison to Industry for the Embedded World North America Exhibition and Conference, and has held similar positions with the global Embedded World Conference and Exhibition.
Previously, Rich was the Brand Director for UBM’s award-winning Design News property. Prior to that, he led the content team for UBM Canon’s Medical Devices Group, as well all custom properties and events. In prior stints, he led the Content Team at EE Times, handling the Embedded and Custom groups and the TechOnline DesignLine network of design engineering web sites.
Nass holds a BSEE degree from the New Jersey Institute of Technology.
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