Alliance Memory

12815 NE 124th St STE#D Kirkland
Kirkland, WA 98034
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Alliance Memory
Articles related to Alliance Memory

Alliance Memory Released its Expanded Series of High-Speed CMOS Mobile Low-Power SDRAMs - News

May 03, 2024

Kirkland, Washington. Alliance Memory released its expanded series of high-speed CMOS mobile low-power SDRAMs consisting of 16Gb and 32Gb LPDDR4X devices. Low-voltage operation of 0.6V, the 16Gb AS4C512M32MD4V-046BIN and 32Gb AS4C1G32MD4V-046BIN deliver enhanced efficacy in battery life.  


Alliance Memory Expands its NOR Flash Memory Products - News

November 16, 2023

Kirkland, Washington. Alliance Memory is expanding its 3V multiple input/output serial NOR flash memory products by welcoming its 4Mb (AS25F304MD-10S1IN) and 16Mb (AS25F316MQ-10S1IN) devices in the SOP8 Narrow Body (150mils) package. The devices have a read performance of 104MHz with accelerated program and erase times down to 1.1ms (4Mb) and 2.6ms (16Mb).


Alliance Memory Announces New 2Gb, 4Gb, 8Gb, and 16Gb LPDDR4X SDRAMs - News

July 24, 2023

KIRKLAND, Wash. —Alliance Memory has expanded its offering of high-speed CMOS mobile low-power SDRAMs with four new LPDDR4X devices in a variety of densities.


Alliance Memory has New Industrial eMMCs - News

July 13, 2023

Kirkland, Washington. Alliance Memory is now delivering its industrial -grade embedded multi-media card (eMMC), the ASFC16G31M-51BIN. The card incorporates NAND flash memory with an eMMC controller and flash transition layer (FTL) management software for efficient performance with wear leveling and bad block management. The eMMC arrives compliant with the JEDEC eMMC v5.1 industry standard. Ideal applications include smart watches, digital TVs, VR and AR headsets, digital cameras, CCTV, automation, point-of-sale systems, and more.


Alliance Memory Releases its 1Gb x 16-bit DDR4 SDRAM - News

February 21, 2023

KIRKLAND, Washington. Alliance Memory stated it has extended its portfolio of CMOS DDR4 SDRAMs with a 16Gb device in the 96-ball FBGA form factor, the AS4C1G16D4-062BCN. The DDR4 SDRAM operates at a low +1.2V (±0.06V). It was developed and qualified for utilization in 5g designs, computing applications, surveillance systems, smart meters, human-machine interfaces (HMI), digital signal controllers, and PNDs.


New LPSRAMS from Alliance Memory Offer Integrated Error-Correction Code - News

January 31, 2023

Kirkland, Wash. Alliance Memory shared that it has extended its portfolio of low power asynchronous SRAM (LPSRAM) devices. The AS6CE1016A (1Mb) and AS6CE4016B (4Mb) integrate an error-correction code (ECC) for a more reliable LPSRAM When juxtaposed to previous-generation technology, the LPSRAM’s deliver upgraded failure in time (FIT), mean time to failure (MTTF), and characteristics with reduced soft error rates (SER).


Alliance Memory Announces New 1.8V, 128Mb Solutions As New Additions to the I/O Serial NOR Flash Memory Series - News

December 19, 2022

KIRKLAND, Wash. — Alliance Memory announced the expansion of its AS25F series of multiple input/output serial NOR flash memory products with two new 1.8V, 128Mb devices designed to support single, dual, and quad SPI modes for computer, consumer, communications, IoT, and mobile markets.