electronica: Alliance Memory to Showcase its Expansion of High-Speed CMOS Mobile Low-Power SDRAMs
October 22, 2024
News
Kirkland Washington. Alliance Memory announced the expansion of its high-speed CMOS mobile low-power SDRAMs with a new single-channel 16Gb LPDDR4X device. It merges higher power efficiency with enhanced clock speeds and data rates in a 200-ball FBGA form factor.
The AS4C1G16MD4V-046BIN’s single channel supports eight banks of 16 bits providing a fully synchronous operation, programmable read and write burst lengths of 16, 32, and on the fly, and configurable drive strength. A self-refresh rate is managed by an on-chip temperature sensor.
The LPDDR4X SDRAM delivers a high clock frequency of 2.133GHz for a data rate of 4.2Gbps. Operating temperatures range from -40°C to +95°C. It offers consistent drop-in, pin-for-pin-compatible alternatives for similar solutions in high-bandwidth, high-performance memory system applications.
Alliance Memory designed the solution for increased battery life in portable electronics within consumer, commercial, and industrial markets, including:
- Smartphones
- Smart speakers
- Wearables
- Security Surveillance Systems
For more information, visit alliancememory.com.
Chad Cox is the Production Editor at Embedded Computing Design. His responsibilities are centered around content creation, writing and editing, and article research and development. Chad covers industry news and events and is known to interact with various industrial leaders via on-premise visits and online interviews. He is responsible for the digital footprint and dissemination of news via social media posts, advertising creation and the production of newsletters including the Embedded Computing Design’s Daily.
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Chad graduated from the University of Cincinnati with a B.A. in Cultural and Analytical Literature and holds a master’s in education.
