Alliance Memory Released its Expanded Series of High-Speed CMOS Mobile Low-Power SDRAMs
May 03, 2024
News
Kirkland, Washington. Alliance Memory released its expanded series of high-speed CMOS mobile low-power SDRAMs consisting of 16Gb and 32Gb LPDDR4X devices. Low-voltage operation of 0.6V, the 16Gb AS4C512M32MD4V-046BIN and 32Gb AS4C1G32MD4V-046BIN deliver enhanced efficacy in battery life.
The LPDDR4X SDRAMs facilitate seamless integration of progressive audio and ultra-high-resolution video, boasting clock frequencies of 2.133GHz and data rates reaching 4.2Gbps. The solutions, equipped with a 32-bit capacity, maintain stable performance across an industrial temperature range from -40°C to +95°C.
The AS4C512M32MD4V-046BIN and AS4C1G32MD4V-046BIN are designed with two channels per device, each channel containing eight banks of 16 bits. According to Alliance Memory, its LPDDR4X SDRAMs provide reliable drop-in, pin-for-pin-compatible replacements for a variety of solutions in high-bandwidth, high-performance memory system applications.
Ideal applications include smartphones, smart speakers, security surveillance systems, and other IoT devices utilizing AI and 5G technologies.
For more information, visit alliancememory.com.
Chad Cox is the Production Editor at Embedded Computing Design. His responsibilities are centered around content creation, writing and editing, and article research and development. Chad covers industry news and events and is known to interact with various industrial leaders via on-premise visits and online interviews. He is responsible for the digital footprint and dissemination of news via social media posts, advertising creation and the production of newsletters including the Embedded Computing Design’s Daily.
He is well versed in many facets of industrial computing including Edge AI, IoT, Processing, Security, Open Source, and more.
Chad graduated from the University of Cincinnati with a B.A. in Cultural and Analytical Literature and holds a master’s in education.
