SEOUL, South Korea - Magnachip Semiconductor Corporation announced the release of its 6th-generation 600V Super Junction Metal Oxide Semiconductor Field Effect Transistor (SJ MOSFET) built on the 180nm microfabrication process and Magnachip’s latest design technology

SEOUL, South Korea - Magnachip Semiconductor Corporation launched its 1200V and 650V Insulated Gate Bipolar Transistors (IGBTs), designed for the positive temperature coefficient (PTC) heaters of electric vehicles (EVs).

SEOUL, South Korea - Magnachip Semiconductor Corporation released four new MXT LV Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs)*, using Super-Short Channel technology, to expand the company's seventh-generation MXT LV MOSFET line-up for battery protection circuits of mobile devices, from premium foldable phones to wireless earphones.

SEOUL, South Korea - Magnachip Semiconductor Corporation began mass production of its new 40V MXT Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET)¹ for automotive energy recovery systems.

SEOUL, South Korea, - Magnachip Semiconductor Corporation announced a new family of 600V Super Junction Metal Oxide Semiconductor Field Effect Transistors (SJ MOSFETs) composed of nine distinct products featuring proprietary design technology.

SEOUL, South Korea – Magnachip Semiconductor Corporation has launched the full-scale mass production of its new 40V MXT Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET)¹ designed for the Electric Water Pumps (EWPs) and Electric Oil Pumps (EOPs) in electric vehicles (EVs).

SEOUL, South Korea. Magnachip unveiled its MDT15N054PTRH, an eighth-generation 150V MXT Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) enhanced for Light Electric Vehicle (LEV) motor controllers, and battery management systems (BMSs) lowering R_DS(on) by 28%.