Nexperia Releases ASFETS with 2x the Increase in SOA - NewsNovember 23, 2022
Nijmegen. Nexperia adds ‘ASFETs for Hotswap and Soft Start’ family with 25 V and 30 V devices with SOA. The PSMNR67-30YLE ASFET produces 2.2x stronger SOA (12 V @100 mS) with an RDS(on) (max) as low as 0.7 mΩ.
Nexperia to Demonstrate Full Range of Automotive and Industrial Applications at electronica 2022 - NewsOctober 25, 2022
For the first time Nexperia will be part of electronica with a presence in Hall C3, booth 319.
Ultra-Low Capacitance ESD Protection Diodes from Nexperia Protect Automotive Data Interfaces - NewsAugust 09, 2022
Nexperia announced an extension to its portfolio of low clamping and ultra-low capacitance ESD protection diodes. This portfolio is designed to protect high-speed data lines such as USB 3.2, HDMI 2.0, LVDS, automotive A/V Monitors, displays, and cameras.
The Smallest DFN MOSFETs in the World is Available from Nexperia - NewsJuly 12, 2022
Nexperia has announced the availability of 20 V and 30 V MOSFETs in the world's smallest DFN package, the DFN0603. Nexperia already offers ESD protection devices in this package, but has now succeeded in bringing it to their MOSFET portfolio, an industry first
Nexperia Launches New Portfolio of Application Specific MOSFETs (ASFETs) for Automotive Airbags - NewsMay 16, 2022
Nexperia has launched a new portfolio of application specific MOSFETs (ASFETs) for automobile airbag applications, headlining with the release of the BUK9M20-60EL single N-channel 60 V, 13 mOhm logic level MOSFET in LFPAK33 packaging.
Nexperia Expands its Wide Bandgap Semiconductor Offering With New Family of High-Performance Silicon Carbide (SiC) Diodes - NewsNovember 23, 2021
Nexperia announced its entry into the high-power Silicon Carbide (SiC) diodes market with the introduction of 650 V, 10 A SiC Schottky diodes.
Newark Now Shipping Nexperia Power GaN FETS for Reduced Power Loss in EVs, 5G and IoT - Press ReleaseOctober 08, 2020
Newark is announcing the availability of Nexperia's new to market, innovative Power Gallium Nitride (GaN) FET range.