Weebit Nano’s Resistive Random-Access Memory (ReRAM) module is now certified up to 125 degrees Celsius (automotive grade 1 Non-Volatile Memories (NVMs)). The full qualification establishes Weebit’s ReRAM is approved for utilization in microcontrollers, automotive applications, and high-temperature industrial environments.

Hod Hasharon, Israel and Bloomington, Minnesota. Weebit Nano Limited and SkyWater Technology announced Weebit Nano's Resistive Random-Access Memory (ReRAM) IP is fully qualified for industrial temperatures utilizing SkyWater's 130nm CMOS (S130) process, plus third-party processing.

Saying that non-volatile memory (NVM) is ubiquitous is an understatement. From our consumer devices to industrial and medical/healthcare applications, even in our cars, NVM is omnipresent. It’s used to store the operating system, the program files, our pictures, videos, and other data. In environments with high levels of radiation, such as aerospace and medical devices, selecting the right NVM can be a key consideration since radiation can impact the operation of many technologies.

Radiation can impact the operation of non-volatile memory (NVM) technologies, with the potential to cause permanent damage to semiconductor devices used in high-radiation environments. Selecting the right embedded NVM is critical for devices in these environments, including aerospace and medical devices. 

Hod Hasharon, Israel and Bloomington, Minnesota. Weebit Nano Limited and SkyWater Technology released Weebit’s resistive RAM (ReRAM) IP in SkyWater’s 130nm CMOS (S130) process. Designers can now simply embed Weebit’s proven non-volatile memory (NVM) into their SoC.

Weebit Nano Limited announced it has taped-out (released to manufacturing) demonstration chips integrating its embedded Resistive Random-Access Memory (ReRAM) module to SkyWater Technology’s foundry. 

Weebit Nano Limited announced that together with its development partner CEA-Leti, it has demonstrated its first operational crossbar arrays, a key milestone on the company’s path to creating discrete, stand-alone, non-volatile memory (NVM) chips.