ON Semiconductor Announces New 650V Silicon Carbide MOSFETs

By Tiera Oliver

Assistant Managing Editor

Embedded Computing Design

February 18, 2021

News

ON Semiconductor Announces New 650V Silicon Carbide MOSFETs

Switching and improved reliability to deliver power density improvements for challenging applications. 

ON Semiconductor announced a new range of silicon carbide (SiC) MOSFET devices for demanding applications. According to. the company, by replacing existing silicon switching technologies with the new SiC devices, designers will achieve better performance in applications such as electric vehicles (EV) on-board chargers (OBC), solar inverters, server power supply units (PSU), telecoms, and uninterruptible power supplies (UPS).

ON Semiconductor’s new Automotive AECQ101 and Industrial grade qualified 650 volt (V) SiC MOSFETs are based upon a new wide bandgap material that provides ideal switching performance and improved thermals when compared to silicon. Per the company, this results in improved efficiency at the system level, enhanced power density, reduced electromagnetic interference (EMI), and reduced system size and weight.

The new generation of SiC MOSFETs employ an active cell design combined with thin wafer technology enabling figure of merit Rsp (Rdson*area) for 650 V breakdown voltage. Also, per the company, the NVBG015N065SC1, NTBG015N065SC1, NVH4L015N065SC1, and NTH4L015N065SC1 have the lowest Rdson (12 mOhm) in the market in D2PAK7L and To247 packages. This technology is also designed around energy loss figure of merits for suitable performance in automotive and industrial applications. An internal gate resistor (Rg) allow flexibility to designers, eliminating the need to slow down devices artificially with external gate resistors. Higher surge, avalanche capability, and short circuit robustness all contribute to ruggedness that delivers reliability and long device lifetimes.

The new devices are all surface mount and available in industry standard package types including TO247 and D2PAK. 

For more information, visit http://www.onsemi.com
 

Tiera Oliver is the assistant managing editor at Embedded Computing Design. She is responsible for web content editing, product news, and story development. She also manages, edits, and develops content for ECD podcasts, including Embedded Insiders.

She utilizes her expertise in journalism and content management to oversee editorial content, coordinate with editors, and ensure high-quality output across web, print, and multimedia platforms. She manages diverse projects, assists in the production of digital magazines, and hosts company podcasts by conducting in-depth interviews with industry leaders to deliver engaging and insightful discussions.

Tiera attended Northern Arizona University, where she received her bachelor's in journalism and political science. She was also a news reporter for the student-led newspaper, The Lumberjack. 

More from Tiera