Renesas Electronics Corporation
Tokyo, Koto-ku, Toyosu 135-0061 [email protected]
Tokyo, Japan. Renesas Electronics Corporation released information on its RAJ2930004AGM, a gate driver IC developed to operate high-voltage power devices such as IGBTs (Insulated Gate Bipolar Transistors) and SiC (Silicon Carbide) MOSFETs for electric vehicle (EV) inverters.
Renesas Announces New Automotive Intelligent Power Device for Efficient Power Distribution in E/E Architectures - NewsJanuary 20, 2023
TOKYO, Japan ― Renesas Electronics Corporation announced the new RAJ2810024H12HPD, an automotive Intelligent Power Device (IPD) designed to efficiently control the power distribution of next-generation E/E (electrical/electronic) automotive architectures.
Tokyo, Japan. Renesas Electronics Corporation made available an automotive Intelligent Power Device (IPD), RAJ2810024H12HPD, for safe and flexible management of power dissemination in vehicles. The solution delivers the needs of next-generation E/E (electrical/electronic) architectures. It was designed in a TO-252-7 form factor which helps reduce the mounting vicinity by 40% when compared to the conventional TO-263.
TOKYO, Japan ― Renesas and Fixstars Corporation are jointly developing tools for autonomous drive and advanced driver-assistance systems (ADAS) that enable software simulation and optimization, specifically for the R-Car system-on-chip (SoC) devices from Renesas.
TOKYO. “High levels of integration and the flexibility of programmability helps manufacturers reduce component counts, saving board space and power,” said Susie Inouye, Principal Analyst at Databeans. With this in mind, Renesas Electronics Corporation released its VersaClock 7 configurable clock generators with 8-12 differing outputs, an embedded crystal oscillator, 150fs typical RMS 12k-20MHz phase jitter, 1.8V/2.5V/3.3V flexible power rails, digital holdover and hitless switching, SPI / I2C/ SMBUS interface support, PCIe Gen 1-6 support, and up to 27 customizations of external EEPROM. All of this is included in a 5 x 5mm, 6 x 6 mm QFN form factor designed for robust computing, wired infrastructure, and data centers.
MUNICH, Germany and TOKYO, Japan ― Renesas Electronics announced the RAA270205 4x4-channel, 76-81GHz high-definition transceiver, a MMIC (monolithic microwave integrated circuit) transceiver designed for imaging radar, long-range forward-looking radar, 4D radar, and corner and central-processing radar architectures commonly known as “satellite” automotive radar systems.
MUNICH, GERMANY & TOKYO, JAPAN. Renesas Electronics Corporation is expanding its low-power WAN product line as part of its strategy to deliver connectivity devices used for smart cities, smart homes, medical devices and industrial applications. The RYZ024A supports Cat-M1 and NB-IoT internet connectivity independent of a gateway, consuming 1µA (microamp) in power savings mode. The RYZ024A supports extended discontinuous reception (eDRX) with an extended voltage range of 2.2V to 5.5V, making it suitable for battery-powered applications.