Infineon Releases CoolSiC™ MOSFETs 400 V for AI Server Power Supplies

By Tiera Oliver

Associate Editor

Embedded Computing Design

May 28, 2024


Infineon Releases CoolSiC™ MOSFETs 400 V for AI Server Power Supplies

Infineon Technologies AG has extended the development of their SiC MOSFETs to voltages below 650 V, now launching the new CoolSiC™ MOSFET 400 V family based on the second generation (G2) CoolSiC technology introduced earlier this year.

The new MOSFET portfolio was developed for use in AI servers' AC/DC stage, designed to complement Infineon’s recently announced PSU roadmap. The devices are also ideal for solar and energy storage systems (ESS), inverter motor control, industrial and auxiliary power supplies (SMPS), and solid-state circuit breakers for residential buildings.

According to the company, the new family features ultra-low conduction and switching losses compared to existing 650 V SiC and Si MOSFETs. Implemented in a multi-level PFC, the AC/DC stage of the AI Server PSU can attain a power density of more than 100 W/in³ and is proven to reach 99.5 percent efficiency. This is an efficiency improvement of 0.3 percentage points over solutions using 650 V SiC MOSFETs. In addition, the system solution for AI Server PSUs is completed by implementing CoolGaN™ transistors in the DC/DC stage. With this combination of high-performance MOSFETs and transistors, the power supply can deliver more than 8 kW with an increase in power density by a factor of more than 3 compared to current solutions.

The new MOSFET portfolio comprises 10 products: five R DS(on) classes from 11 to 45 mΩ in Kelvin-source TOLL and D²PAK-7 packages with .XT package interconnect technology. The drain-source breakdown voltage of 400 V at T vj = 25°C. makes them ideal for use in 2- and 3-level converters and synchronous rectification. The components offer high robustness under harsh switching conditions and are 100 percent avalanche-tested. The highly robust CoolSiC technology in combination with the .XT interconnect technology enables the devices to cope with power peaks and transients caused by sudden changes in the power requirements of the AI processor. The connection technology and a low and positive R DS(on) temperature coefficient enable suitable performance under operating conditions with higher junction temperatures.

Engineering samples of the CoolSiC MOSFET 400 V portfolio are now available and will go into series production in October 2024. The latest generation of Infineon’s CoolSiC MOSFETs will be showcased at the Infineon booth at PCIM Europe 2024 in June. More information is available at Further information about Infineon’s SiC, GaN, and Si solutions for powering AI PSUs is available at

Tiera Oliver, Associate Editor for Embedded Computing Design, is responsible for web content edits, product news, and constructing stories. She also assists with newsletter updates as well as contributing and editing content for ECD podcasts and the ECD YouTube channel. Before working at ECD, Tiera graduated from Northern Arizona University where she received her B.S. in journalism and political science and worked as a news reporter for the university’s student led newspaper, The Lumberjack.

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