Innoscience Releases 140W Power Supply Design Using High- and Low-Voltage GaN Switches
April 18, 2022
News
Innoscience Technology announced an ultra-high-density 140W power supply demo that uses the company's high- and low-voltage GaN HEMT devices to attain efficiencies of over 95% (230VAC; 5V/28A). Measuring just 60x60x22mm (2.4x2.4x0.9in) the PSU has a class-leading power density of 1.76W/cm3 (29W/in3).
The 140W 300kHz AC/DC adapter uses a CRM Totem Pole PFC + AHB topology. It features:
Innoscience's INN650DA140A:
- 650V /140mΩ GaN HEMT in the 5x6mm DFN package
- 650V/240mΩ 8x8mm DFN-packaged
Innoscience's INN650DA240A:
- 5x6mm DFN 650V/240mΩ device
- 150V/7mΩ, 2.2x3.2mm LGA part within Innoscience's low-voltage GaN HEMT range
Dr. Denis Marcon, General Manager of Innoscience Europe and Marketing Manager for the USA and Europe, explained: "By using GaN switches for both the high- and low-voltage functions on this design, we are maximizing efficiency rather than compromising it with lossy silicon devices. This is possible thanks to Innoscience's cost-effective and high-volume manufacturing processes and capabilities."
For more information, visit innoscience.com.
Chad Cox. Production Editor, Embedded Computing Design, has responsibilities that include handling the news cycle, newsletters, social media, and advertising. Chad graduated from the University of Cincinnati with a B.A. in Cultural and Analytical Literature.
