Infineon Technologies started high-volume production of a comprehensive portfolio of 1200 V CoolSiC MOSFET devices, rated from 30 mΩ to 350 mΩ and implemented into TO247-3 and TO247-4 housings. The expansion includes a surface-mount portfolio and a 650V CoolSiC MOSFET product family. CoolSiC MOSFET lead products in TO247 and easy power module packages build on trench SiC MOSFET semiconductor process to allow for both lowest losses in the application, and highest reliability in operation.

Gate-source operating voltages are adopted for discrete package solutions, and a low dynamic loss enables high efficiency with a simple unipolar gate drive scheme. CoolSiC trench technology features a threshold voltage rating larger than 4V, combined with a low Miller capacitance, with best-in-class immunity against unwanted parasitic turn-on effects compared to other SiC MOSFETs on the market.

With a turn-on gate-source voltage of +18V with 5V margin to a maximum rated voltage of +23 V, the SiC discrete MOSFETs deliver an advantage over silicon IGBTs and super-junction MOSFETs, and include a robust body diode rated for hard commutation. MOSFET functionality in SiC material offers a new degree of system design flexibility in power factor correction (PFC) circuits, bi-directional topologies, and any hard- and soft-switching DC-DC converters or DC-AC inverters.

The 1200 V CoolSiC MOSFETs in TO247 package can be ordered now, and corresponding on-resistance ratings in an SMT portfolio in a D 2PAK-7 housing will be available as engineering samples in Q4 2019. The 650 V CoolSiC MOSFET engineering samples in TO247-3 and TO247-4 rated at 26 mΩ to 107 mΩ will also become available in Q4 2019.

For more information, visit www.infineon.com/coolsic-mosfet.