Alliance Memory Releases its 1Gb x 16-bit DDR4 SDRAM

By Chad Cox

Production Editor

Embedded Computing Design

February 21, 2023

News

Image Credit: Alliance Memory

KIRKLAND, Washington. Alliance Memory stated it has extended its portfolio of CMOS DDR4 SDRAMs with a 16Gb device in the 96-ball FBGA form factor, the AS4C1G16D4-062BCN. The DDR4 SDRAM operates at a low +1.2V (±0.06V). It was developed and qualified for utilization in 5g designs, computing applications, surveillance systems, smart meters, human-machine interfaces (HMI), digital signal controllers, and PNDs.

The AS4C1G16D4-062BCN is designed on an 8n-prefetch architecture delivering clock speeds up to 1600MHz and transfer rates up to 3200 MT/s. According to Alliance Memory, “the 1Gb x 16-bit AS4C1G16D4-062BCN supports sequential and interleave burst types with read or write burst lengths of BC4, BL8, and on the fly. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh.”

It offers a reliable drop-in, pin-for-pin-compatible alternative that  eradicates redesigns and part requalification. A commercial operating temperature of 0°C to +95°C makes the AS4C1G16D4-062BCN an option for industrial, networking, telecommunications, gaming, and consumer markets.

Offered in the commercial (0°C to +95°C) temperature range, the device is ideal for the industrial, networking, telecommunications, gaming, and consumer markets.

For more information, visit alliancememory.com.

Chad Cox. Production Editor, Embedded Computing Design, has responsibilities that include handling the news cycle, newsletters, social media, and advertising. Chad graduated from the University of Cincinnati with a B.A. in Cultural and Analytical Literature.

More from Chad