Diodes Incorporated's PowerDI8080-Packaged MOSFET Increases Power Density in Modern Automotive Applications

By Chad Cox

Embedded Computing Design

June 20, 2022

News

Diodes Incorporated's PowerDI8080-Packaged MOSFET Increases Power Density in Modern Automotive Applications
Image Provided by Diodes Incorporated

The DMTH4M70SPGWQ is a 40V automotive-compliant MOSFET with a typical RDS(ON) of 0.54m at a gate drive of 10V.

Diodes Incorporated (Diodes) has introduced the PowerDI®8080-5, a high current, thermally efficient power package designed for electric vehicle (EV) applications. The DIODESTM DMTH4M70SPGWQ, a 40V automotive-compliant MOSFET with a typical RDS(ON) of 0.54m at a gate drive of 10V and a gate charge of 117nC, is the first product to be released in the PowerDI®8080-5 package. Because of this industry-leading performance, designers of automotive high-power BLDC motor drives, DC-DC converters, and charging systems can maximize system efficiency while minimizing power dissipation.

The PowerDI®8080-5 package has a PCB footprint of 64mm2, which is 40% smaller than the TO263 (D2PAK) package format. It also has a 1.7mm off-board profile, which is 63% lower than that of a TO263. The copper clip bonding between the die and the terminals enables a 0.36°C/W junction-to-case thermal resistance. This allows the PowerDI®8080-5 to handle currents of up to 460A while providing an eight-fold increase in power density over a TO263 package.

The AEC-Q101 qualified DMTH4M70SPGWQ is PPAP capable and manufactured in IATF 16949 certified facilities. Its gull wing leads improve temperature cycling reliability while also facilitating optical inspection (AOI).

For more information, please visit diodes.com.