KIOXIA Announces Ver 3.1 UFS Embedded Flash Memory Devices

By Taryn Engmark

Associate Editor

Embedded Computing Design

August 11, 2021


KIOXIA Announces Ver 3.1 UFS Embedded Flash Memory Devices

Built on the latest generation BiCS FLASH™ 3D Flash Memory, Ver. 3.1 brings a thinner profile and faster read and write speeds to applications.

KIOXIA America, Inc. announced sampling of its newest generation of 256 and 512 gigabyte (GB) Universal Flash Storage (UFS) Ver. 3.1 embedded flash memory devices. Housed in 0.8 and 1.0mm-high packages, the new products improve performance by 30% for random read and 40% for random write.

The set of power- and space-conscious applications that utilize embedded flash memory continue to need higher performance and density. From a total GB perspective, UFS accounts for the majority of the demand relative to e-MMC. According to Forward Insights, when combining overall UFS and e-MMC GB demand worldwide, almost 70% of the demand this year is for UFS, and this will continue to grow.

The UFS 256GB and 512GB devices include Host Performance Booster (HPB) Ver. 2.0, which improves random read performance by utilizing the host side memory to store logical to physical translation tables. While HPB Ver. 1.0 only enables 4 kilobyte chunk size access, HPB Ver. 2.0 enables wider access — which can further boost random read performance.

For more information, visit KIOXIA.