Weebit Nano Demonstrates Integration of Selector with ReRAM Cell for Stand-Alone Memory Market
July 06, 2021
News
Weebit Nano Limited announced it has created the industry’s first commercial integration of an oxide-based ReRAM (OxRAM) cell with an ovonic threshold switching (OTS) selector.
This announcement is designed to reach Weebit’s target market beyond embedded non-volatile memory (NVM) to include discrete memory technology, and will enable the implementation of 3D memory stacking and crossbar architectures in future developments.
According to the copany, OTS is an ideal selector technology for discrete ReRAM chips as it enables the smallest ReRAM bit cell, as small as 4F2, as well as endurance, low energy consumption, and high switching speed.
“New markets like IoT, 5G and AI are driving needs for emerging NVM on advanced process nodes,” said Jim Handy, Memory Analyst, Objective Analysis. “Weebit’s combination of ReRAM with an OTS selector promises to scale to the advanced processes and high memory densities that new memory chips will need.”
For more information, visit: www.weebit-nano.com
