The EPC2051 closes the gap between size and performance
September 12, 2018
EPC's EPC2051 is a 100 V GaN transistor measuring 1.30 mm x 0.85 mm, bringing higher higher efficiency and power density.
Efficient Power Conversion (EPC) released their EPC2051, a 100 V GaN transistor with a maximum RDS(on) of 25 ohm and a 37 A pulsed output current for high efficiency power conversion in a tiny 1.1mm2 footprint.
The EPC2051 is a mere 1.30 mm x 0.85 mm (1.1 mm2), preventing applications that demand higher efficiency and power density from choosing between size and performance.
The EPC2051 achieves 97 percent efficiency at a 4 A output while switching at 500 kHz operating in a 50 V - 12 V buck converter.
The EPC2051 is also cost efficient, as it brings the performance of GaN FETs at a comparable value to silicon MOSFETs. Applications that can benefit include 48 V input power converters for computing and telecom systems, LiDAR, LED Lighting, and Class-D audio.
For more information, please visit http://epc-co.com/epc/.