Vishay Intertechnology Introduces 10 New 650V SiC Schottky Diodes

By Chad Cox

Production Editor

Embedded Computing Design

March 09, 2021


Vishay Intertechnology Introduces 10 New 650V SiC Schottky Diodes
(Image courtesy of Vishay)

Vishay Intertechnology introduced 10 new 650 V silicon carbide (SiC) Schottky diodes.

Featuring a merged PIN Schottky (MPS) design, the semiconductor devices are designed to increase the efficiency of high frequency applications by reducing switching losses regardless of the effects from temperature variances.

The MPS design of the diodes shields the electric field from the Schottky barrier to reduce leakage currents while increasing surge current capability. Compared to pure silicon Schottky devices, the diodes handle the same level of current with only a slight increase in forward voltage drop while demonstrating a significantly higher degree of ruggedness.

Per a company press release, the devices are intended for:

  • PFC and output rectification in flyback power supplies and LLC converters for servers.

  • Telecom equipment.

  • UPS.

  • Solar inverters.

The diodes are available with current ratings from 4 A to 40 A in the 2L TO-220AC and TO-247AD 3L packages and offer high temperature operation to +175 °C.

For more information, visit

Chad Cox. Production Editor, Embedded Computing Design, has responsibilities that include handling the news cycle, newsletters, social media, and advertising. Chad graduated from the University of Cincinnati with a B.A. in Cultural and Analytical Literature.

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